Physics: Condensed Matter, Physics: Optics and Laser, Physics: Semiconductor
US Army Research Laboratory
The United States Army Research Laboratory fosters scientific creativity in a wide range of scientific disciplines. Scientists at ARL have access to multiple avenues of development in both their research and career goals. The sense of satisfaction of knowing that their work can make a difference to Soldiers every day spurs discovery among the nearly 1,300 scientists and engineers working in ARL's world-class facilities.
The Nitride Semiconductor Optoelectronics team at the U.S. Army Research Laboratory in Adelphi, MD, in the greater Washington D.C. metro area, has an opening for a postdoctoral research scientist in the fields of ultrafast-laser optical spectroscopy and semiconductor physics. Applicants should have a demonstrated background and interest in the study of electron and phonon processes in emerging materials through light-matter interaction. Experience in nonlinear optics and optoelectronic device physics is a plus. This position is for an experimentalist.
Current Research Programs Include:
Carrier dynamics in UV-optoelectronic devices.
The effects of carrier localization and electric/piezoelectric fields on the radiative lifetime of bulk and quantum well active regions of III-Nitride ternary systems are studied by time-resolved photoluminescence (TRPL), including time-correlated single photon counting (TCSPC) and optical gating in a nonlinear crystal.
Coherent optical control in wide band gap semiconductors.
Coherent quantum effects in the optical spectra of wide band gap materials are studied and the feasibility of fast optical control of quantum states in GaN and ZnO heterostructures is examined through TRPL, and pump-probe and other four-wave mixing techniques. Dephasing processes such as carrier-carrier and carrier-phonon scattering are addressed.
Tunable solid-state quantum memory.
Dephasing processes in rare-earth-ion doped III-Nitrides are studied through photon echo experiments. The ability to tune optical transitions for multimode storage capcacity through built-in and applied electric fields is also investigated.
Carrier transport in heterostructure devices.
Minority carrier transport and lifetime in IR detector materials and device structures, including type-II superlattices and bulk InAsSb, and in wide bandgap III-Nitride heterostructures are studied using TRPL, optical gating in a nonlinear crystal, and pump-probe techniques.
Thermal transport and elastic strain propagation across interfaces.
Sound velocity and coherent acoustic phonon attenuation are studied by pump-probe techniques and time domain thermo-reflectance (TDTR) to measure thermal boundary resistance and conductivity in AlN materials.
THz optics and spectroscopy.
Pump-probe techniques using THz pump and/or probe pulses are used to perform time-resolved spectroscopy of free carrier dynamics in semiconductor materials where applicable, which provides information on internal electric fields and carrier transport.
Employment will be located at the Army Research Laboratory on a Department of Defense (DoD) facility. Non-US citizens are advised that security restrictions may apply that could preclude their participation in these efforts. Before applying, non-citizens are requested to contact the ARL Security and Counterintelligence Branch (301) 394-2444 concerning their eligibility.
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